2000. 3. 7 1/2 semiconductor technical data KTC2026 epitaxial planar npn transistor revision no : 3 general purpose application. features low collector saturation voltage : v ce(sat) =1.0v(max.) at i c =2a, i b =0.2a. complementary to kta1046. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7 v collector current i c 3 a base current i b 0.5 a collector power dissipation ta=25 1 p c 2 w tc=25 1 20 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 100 a emitter cut-off current i ebo v eb =7v, i c =0 - - 100 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 60 - - v dc current gain h fe (note) v ce =5v, i c =0.5a 100 - 300 collector emitter saturation voltage v ce(sat) i c =2a, i b =0.2a - 0.25 1.0 v base-emitter voltage v be v ce =5v, i c =0.5a - 0.7 1.0 v transition frequency f t v ce =5v, i c =0.5a - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 35 - pf switching time turn-on time t on - 0.65 - s storage time t stg - 1.3 - fall time t f - 0.65 - note : h fe classification y:100 200, gr:150 300 i b1 15 ? b1 i cc v =30v i b2 i b2 20 sec i =-i =0.2a 1% b1 b2 output duty cycle input < =
2000. 3. 7 2/2 KTC2026 revision no : 3 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (a) 0.02 0.05 0.1 0.3 fe dc current gain h 10 collector-emitter saturation ce(sat) 10 3 0.05 0.02 collector current i (a) c v - i 12345678 0.5 1.0 1.5 2.0 2.5 3.0 common emitter tc=25 c 60 50 40 30 20 90 80 70 0 i =10ma b fe c 13 10 30 50 100 300 common emitter v =5v ce tc=100 c tc = 25 c tc= -25 c ce(sat) c voltage v (v) 1 0.3 0.1 5 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b t c= 100 c tc=25 c tc=-25 c collector power dissipation p (w) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 150 175 200 5 10 15 20 25 30 35 40 tc=ta infinite heat sink 300 x 300 x 2mm al heat sink 200 x 200 x 2mm al heat sink 100 x 100 x 1mm al heat sink 100 x 100 x 1mm fe heat sink 50 x 50 x 1mm al heat sink 50 x 50 x 1mm fe heat sink no heat sink 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 i max.(pulsed)* c (continuous) c i max. safe operating area ce collector-emitter voltage v (v) 1 3 10 100 0.1 c collector current i (a) 30 550 0.3 0.5 1 3 5 10 curves must be derated linearly with increase in temperature single nonrepetitive pulse tc=25 c * 1ms* 10ms* 10 0 ms* dc o pe r at io n v max. ceo
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